Method of manufacturing semiconductor device

ABSTRACT

There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 17/722,726, filed Apr. 18, 2022, which is acontinuation application of U.S. patent application Ser. No. 17/477,174,filed Sep. 16, 2021, issued as U.S. Pat. No. 11,322,370, issued on May3, 2022, which is based upon and claims the benefit of priority fromJapanese Patent Application No. 2021-113917, filed on Jul. 9, 2021, theentire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a method of manufacturing asemiconductor device.

BACKGROUND

In the related art, as a substrate processing apparatus used in aprocess of manufacturing a semiconductor device, for example, there is asubstrate processing apparatus including a plurality of process chambersfor processing a substrate and having a common exhaust system for theplurality of process chambers. Specifically, there is a substrateprocessing apparatus in which exhaust pipes are connected to a pluralityof process chambers, respectively, and the exhaust pipes merge on thedownstream side thereof. It may be possible to improve productivity byperforming the same process to the substrate in each process chamber.

SUMMARY

The exhaust pipes are connected to the process chambers, but if theirexhaust performance is lower than the desired performance, the qualityof substrate processing may also deteriorate, which results in decreasein a yield.

Some embodiments of the present disclosure provide a technique capableof predicting a reduction in exhaust performance and maintaining highproductivity.

According to one or more embodiments of the present disclosure, there isprovided a technique that includes adjusting a pressure of each of aplurality of process chambers, by adjusting an opening degree of apressure-adjusting valve included in a common gas exhaust pipe, which isconnected to a plurality of process chamber exhaust pipes individuallyconnected to the plurality of process chambers, respectively, and isdisposed to merge respective process chamber exhaust pipes on adownstream side of the plurality of process chamber exhaust pipes, to apredetermined opening degree and by exhausting an atmosphere of each ofthe process chambers from the plurality of process chamber exhaust pipesand the common gas exhaust pipe while supplying an inert gas to theplurality of process chambers; processing a substrate in each of theprocess chambers, by supplying a process gas to the plurality of processchambers and by exhausting the atmosphere of each of the processchambers from the plurality of process chamber exhaust pipes and thecommon gas exhaust pipe; and detecting a fluctuation of pressures in theprocess chamber exhaust pipes by measuring, by one or more pressuredetectors, the pressures of the process chamber exhaust pipes for apredetermined time in parallel with supplying the inert gas to theplurality of process chambers.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate embodiments of the presentdisclosure.

FIG. 1 is a schematic configuration diagram of a substrate processingapparatus according to a first embodiments.

FIG. 2 is a configuration diagram of a chamber of the substrateprocessing apparatus according to the first embodiments.

FIG. 3 is a configuration diagram of a controller of the substrateprocessing apparatus according to the first embodiments.

FIG. 4 is an explanatory diagram for explaining a table included in thecontroller according to the first embodiments.

FIG. 5 is a flow chart of a substrate-processing process according tothe first embodiments.

FIG. 6 is an explanatory diagram for explaining the relationship betweeneach step of the flow according to the first embodiments and theoperation of parts.

FIG. 7 is a flow chart of a film-processing step according to the firstembodiments.

FIG. 8 is a flow chart of a substrate-processing process according to asecond embodiments.

DETAILED DESCRIPTION

Reference will now be made in detail to various embodiments, examples ofwhich are illustrated in the accompanying drawings. In the followingdetailed description, numerous specific details are set forth in orderto provide a thorough understanding of the present disclosure. However,it will be apparent to one of ordinary skill in the art that the presentdisclosure may be practiced without these specific details. In otherinstances, well-known methods, procedures, systems, and components havenot been described in detail so as not to unnecessarily obscure aspectsof the various embodiments.

Embodiments of the present disclosure will be now described in detailwith reference to the drawings.

First Embodiments

First, the first embodiments of the present disclosure will be describedwith reference to the drawings.

(1) Configuration of Substrate Processing Apparatus

FIG. 1 is a schematic configuration diagram of a substrate processingapparatus according to the first embodiments. As shown in FIG. 1 , thesubstrate processing apparatus 10 is roughly classified into a processmodule 110, and a gas supply part (gas supplier) and a gas exhaust partconnected to the process module 110.

(Process Module)

The process module 110 includes a chamber 100 for performing apredetermined process to the substrate 200. The chamber 100 includes achamber 100 a and a chamber 100 b. That is, the process module 110includes a plurality of chambers 100 a and 100 b. A partition wall 150is installed between the chambers 100 a and 100 b such that theatmospheres in the chambers 100 a and 100 b are not mixed. The detailedstructure of the chamber 100 will be described later.

The substrate 200 to be processed includes, for example, a semiconductorwafer substrate in which a semiconductor integrated circuit device(semiconductor device) is embedded (hereinafter, also simply referred toas a “substrate” or a “wafer”).

(Gas Supply Part)

The gas supply part (gas supplier) that supplies a process gas or thelike to each of the chambers 100 a and 100 b is connected to the processmodule 110. The gas supply part includes a first gas supply part, asecond gas supply part, and a third gas supply part. Hereinafter, theconfiguration of each gas supply part will be described.

(First Gas Supply Part)

First process gas supply pipes 111 a and 111 b are connected to thechambers 100 a and 100 b, respectively, and a first process gas commonsupply pipe 112 is connected to the first process gas supply pipes 111 aand 111 b. A first process gas source 113 is disposed on the upstreamside of the first process gas common supply pipe 112. Mass flowcontrollers (MFCs) 115 a and 115 b and process chamber side valves 116 aand 116 b are installed between the first process gas source 113 and thechambers 100 a and 100 b, respectively, sequentially from the upstreamside. The first gas supply part includes the first process gas commonsupply pipe 112, the MFCs 115 a and 115 b, the process chamber sidevalves 116 a and 116 b, and the first process gas supply pipes 111 a and111 b as first gas supply pipes. The first process gas source 113 may beincluded in the first gas supply part.

A precursor gas as a first process gas, which is one of the processgases, is supplied from the first process gas source 113. Here, a firstelement is, for example, silicon (Si). That is, the precursor gas is,for example, a silicon-containing gas. Specifically, ahexachlorodisilane (Si₂Cl₆, abbreviation: HCDS) gas may be used as thesilicon-containing gas.

(Second Gas Supply Part)

Second process gas supply pipes 121 a and 121 b are connected to thechambers 100 a and 100 b, respectively, and a second process gas commonsupply pipe 122 is connected to the second process gas supply pipes 121a and 121 b. A second process gas source 123 is disposed on the upstreamside of the second process gas common supply pipe 122. Mass flowcontrollers (MFCs) 125 a and 125 b and process chamber side valves 126 aand 126 b are installed between the second process gas source 123 andthe chambers 100 a and 100 b, respectively, sequentially from theupstream side. The second gas supply part (reaction gas supply part)includes the MFCs 125 a and 125 b, the process chamber side valves 126 aand 126 b, the second process gas common supply pipe 122, and the secondprocess gas supply pipes 121 a and 121 b as second gas supply pipes. Thesecond process gas source 123 may be included in the second gas supplypart.

A reaction gas as a second process gas, which is one of the processgases, is supplied from the second process gas source 123. The reactiongas is, for example, an oxygen-containing gas. Specifically, forexample, an oxygen (02) gas is used as the oxygen-containing gas. Here,the first gas supply part and the second gas supply part arecollectively referred to as a process gas supply part.

(Third Gas Supply Part)

First inert gas supply pipes 131 a and 131 b are connected to the firstprocess gas supply pipes 111 a and 111 b and the second process gassupply pipes 121 a and 121 b. Further, a first inert gas common supplypipe 132 is connected to the first inert gas supply pipes 131 a and 131b. A first inert gas (purge gas) source 133 is disposed on the upstreamside of the first inert gas common supply pipe 132. MFCs 135 a and 135b, process chamber side valves 136 a and 136 b, and valves 176 a, 176 b,186 a, and 186 b are installed between the first inert gas source 133and the chambers 100 a, 100 b, respectively, sequentially from theupstream side. The third gas supply part (inert gas supply part)includes the MFCs 135 a and 135 b, the process chamber side valves 136 aand 136 b, the valves 176 a, 176 b, 186 a, and 186 b, the first inertgas common supply pipe 132, and the first inert gas supply pipes 131 aand 131 b. The first inert gas source 133 may be included in the thirdgas supply part. Further, the same configuration may be increased ordecreased depending on the number of process modules installed in thesubstrate processing apparatus 10.

An inert gas (purge gas) is supplied from the first inert gas source133. For example, a nitrogen (N₂) gas is used as the inert gas.

(Gas Exhaust Part)

The gas exhaust part that exhausts an internal atmosphere of the chamber100 a and an internal atmosphere of the chamber 100 b is connected tothe process module 110. Specifically, a process chamber exhaust pipe 224is connected to the chamber 100 a, and a process chamber exhaust pipe226 is connected to the chamber 100 b. That is, a plurality of processchamber exhaust pipes 224 and 226 are individually connected to aplurality of chambers 100 a respectively.

A common gas exhaust pipe 225 is connected to the process chamberexhaust pipes 224 and 226. That is, the common gas exhaust pipe 225 isdisposed on the downstream side of the process chamber exhaust pipes 224and 226 so as to merge the process chamber exhaust pipes 224 and 226. Asa result, the process chamber exhaust pipe 224 and the process chamberexhaust pipe 226 are merged at a merging portion 230 at the downstreamend and further connected to the common gas exhaust pipe 225.

An exhaust pump 223 is disposed on the downstream side of the common gasexhaust pipe 225. An auto pressure controller (APC; also called apressure-adjusting valve) 222, a valve 221, and valves 228 a and 228 bare installed between the exhaust pump 223 and the chambers 100 a and100 b, respectively, sequentially from the downstream side. The gasexhaust part includes the APC 222, the valve 221, the valves 228 a and228 b, the process chamber exhaust pipes 224 and 226, and the common gasexhaust pipe 225. In this way, the internal atmosphere of the chamber100 a and the internal atmosphere of the chamber 100 b are exhausted byone exhaust pump 223.

The process chamber exhaust pipe 224 is installed with a pressuredetector 227 a. The pressure detector 227 a detects an internal pressureof the process chamber exhaust pipe 224 and can be configured by using,for example, a pressure sensor.

Further, the process chamber exhaust pipe 226 is installed with apressure detector 227 b. The pressure detector 227 b detects an internalpressure of the process chamber exhaust pipe 226 and can be configuredby using, for example, a pressure sensor. A second inert gas supply pipe141 b is connected to the upstream side of the pressure detector 227 bin the process chamber exhaust pipe 226. Any one of the pressuredetectors 227 a and 227 b, or a combination thereof, may be referred toas an exhaust pipe pressure detector.

(Chamber)

Subsequently, the detailed structure of the chambers 100 a and 100 b inthe process module 110 will be described. Here, since each of theplurality of chambers 100 a and 100 b has the same configuration, onechamber 100 a (hereinafter, simply referred to as a chamber 100) will bedescribed as an example.

FIG. 2 is a configuration diagram of a chamber of the substrateprocessing apparatus according to the first embodiments. The chamber 100is made of, for example, a metal material such as aluminum (Al) orstainless steel (SUS) and is configured as a flat and airtight processcontainer (airtight container) 302 having a circular cross section. Theairtight container 302 includes an upper container 302 a and a lowercontainer 302 b, and a partition plate 308 is installed between theupper container 302 a and the lower container 302 b. Asubstrate-loading/unloading port 148 adjacent to a gate valve 149 isinstalled on the side surface of the lower container 302 b, and thesubstrate 200 moves between the interior of the lower container 302 band a vacuum transfer chamber (not shown) via thesubstrate-loading/unloading port 148. A plurality of lift pins 307 areinstalled at the bottom of the lower container 302 b.

A substrate support 310 for supporting the substrate 200 is installed inthe chamber 100 configured as the airtight container 302. The substratesupport 310 mainly includes a substrate-mounting surface 311 on whichthe substrate 200 is mounted, a substrate-mounting table 312 includingthe substrate-mounting surface 311 on the surface of thesubstrate-mounting table 312, and a heater 313 as a heating sourceincluded in the substrate-mounting table 312. The substrate-mountingtable 312 is installed with through-holes 314 through which the liftpins 307 penetrate at positions corresponding to the lift pins 307,respectively.

The substrate-mounting table 312 is supported by a shaft 317. A supportof the shaft 317 penetrates a hole installed in the bottom wall of thechamber 100 and is further connected to an elevating mechanism 318outside the chamber 100 via a support plate 316. By operating theelevating mechanism 318 to raise and lower the shaft 317 and thesubstrate-mounting table 312, it is possible to raise and lower thesubstrate 200 mounted on the substrate-mounting surface 311. Further,the circumference of the lower end of the shaft 317 is covered with abellows 319, whereby the interior of the chamber 100 is kept airtight.

When the elevating mechanism 318 raises the substrate-mounting table312, the substrate-mounting table 312 is located at asubstrate-processing position shown in FIG. 2 . In thesubstrate-processing position, the lift pins 307 are buried from theupper surface of the substrate-mounting surface 311 so that thesubstrate-mounting surface 311 supports the substrate 200 from below.When processing the substrate 200, the substrate-mounting table 312 ismaintained at the substrate-processing position. Further, when theelevating mechanism 318 lowers the substrate-mounting table 312, thesubstrate-mounting table 312 is located at a substrate transfer position(see a broken line in FIG. 1 ) at which the substrate-mounting surface311 faces the substrate-loading/unloading port 148. In the substratetransfer position, the upper ends of the lift pins 307 protrude from theupper surface of the substrate-mounting surface 311 so that the liftpins 307 support the substrate 200 from below.

A process space 305 for processing the substrate 200 and a transferspace 306 through which the substrate 200 passes when the substrate 200is transferred to the process space 305 are formed in the chamber 100.

The process space 305 is a space formed between the substrate-mountingtable 312 at the substrate-processing position and a ceiling 330 of thechamber 100. The structure constituting the process space 305 is alsoreferred to as a process chamber 301. That is, the process space 305 isinstalled in the process chamber 301.

The transfer space 306 is a space mainly formed of the lower container302 b and the lower structure of the substrate-mounting table 312 at thesubstrate-processing position. The structure constituting the transferspace 306 is also referred to as a transfer chamber. The transferchamber is disposed below the process chamber 301. It goes withoutsaying that the transfer chamber is not limited to the above structure,but may be any structure as long as it constitutes the transfer space306.

The first process gas supply pipes 111 of the first gas supply part andthe second process gas supply pipes 121 of the second gas supply partare connected to the ceiling 330 facing the process space 305. Morespecifically, the first process gas supply pipe 111 a and the secondprocess gas supply pipe 121 a are connected to the ceiling 330 in thechamber 100 a, and the first process gas supply pipe 111 b and thesecond process gas supply pipe 121 b are connected to the ceiling 330 inthe chamber 100 b. As a result, the first process gas, the secondprocess gas, or the inert gas is supplied into the process space 305.

The process chamber exhaust pipes 224 and 226 of the gas exhaust partare connected to a sidewall portion of the airtight container 302 facingthe process space 305. More specifically, the process chamber exhaustpipe 224 is connected to the sidewall portion of the airtight container302 in the chamber 100 a, and the process chamber exhaust pipe 226 isconnected to the sidewall portion of the airtight container 302 in thechamber 100 b. As a result, a gas supplied into the process space 305 isexhausted through the process chamber exhaust pipes 224 and 226.

(Controller)

The substrate processing apparatus 10 has a controller 380 as a controlpart (control means) that controls the operations of various parts ofthe substrate processing apparatus 10.

FIG. 3 is a configuration diagram of the controller of the substrateprocessing apparatus according to the first embodiments. The controller380 is configured as a computer including at least an arithmetic part(CPU) 380 a, a temporary memory (RAM) 380 b, a memory 380 c, atransmitting/receiving part 380 d, and a timer 380 e. The controller 380is connected to each configuration of the substrate processing apparatus10 via the transmitting/receiving part 380 d, calls a program or arecipe from the memory 380 c according to an instruction from a user whooperates a host device 370 or an input/output device 381 connected viathe transmitting/receiving part 383, and controls the operation of eachconfiguration according to the contents the program or the recipe. Anotification part 384 includes, for example, a display, a microphone,and the like and notifies notification information based on the contentsof a control information memory 395.

The arithmetic part 380 a has a calculation part 391 that calculates atleast a pressure-rising speed value (pressure gradient value). Thecalculation part 391 obtains the pressure-rising speed value of pressurefluctuation based on a pressure fluctuation value detected by thepressure detector 227 during a period of time T1.

The memory 380 c includes a pressure-recording part 392, a comparisondata memory 393, a table 394, and the control information memory 395.The timer 380 e counts the time taken for the pressure detector 227 todetect pressures of the exhaust pipes 224 and 226 in apressure-rising-speed-value-calculating step S110 to be described later.

The pressure-recording part 392 records a pressure value detected byeach of the pressure detectors 227 a and 227 b. The pressure value isrecorded, for example, every time one substrate is processed. Thecalculation part 391 calculates a pressure-rising speed value based onthe detected pressure value and the detected time.

The comparison data memory 393 stores comparison data to be comparedwith the pressure-rising speed value calculated by the calculation part391. The comparison data is a preset value, for example, apressure-rising speed value when the substrate processing apparatus 10operates normally. The comparison data may be data updated afterprocessing the substrate 200. In this case, for example, the highestquality data is used as the comparison data. Here, the highest qualitydata is, for example, the data with the least pressure fluctuation.

As shown in FIG. 4 , the table 394 shows operations based on informationcomparing the calculated pressure-rising speed value and the comparisondata and a difference between pressure-rising speed values calculated bythe pressure detectors, further details of which will be describedlater.

The controller 380 may be configured as a dedicated computer or ageneral-purpose computer. For example, the controller 380 according tothe present embodiments can be configured by preparing an externalmemory (for example, a magnetic tape, a magnetic disk such as a flexibledisk or a hard disk, an optical disc such as a CD or a DVD, amagneto-optical disc such as a MO, a semiconductor memory such as a USBmemory (USB Flash Drive) or a memory card, etc.) 382 that stores theabove-mentioned program and installing the program on thegeneral-purpose computer by using the external memory 382.

Further, a means for supplying the program to the computer is notlimited to the case of supplying the program via the external memory382. For example, a communication means such as the Internet or adedicated line may be used to supply the program to the computer, or theprogram may be supplied by receiving information from the host device370 via the transmitting/receiving part 383 without going through theexternal memory 382. Further, the controller 380 may be instructed byusing an input/output device 381 such as a keyboard or a touch panel.

Further, the memory 380 c and the external memory 382 may be configuredas a non-transitory computer-readable recording medium. Hereinafter,these are also collectively referred simply to as a recording medium.When the term “recording medium” is used in the present disclosure, itmay indicate a case of including the memory 380 c only, a case ofincluding the external memory 382 only, or a case of including both thememory 380 c and the external memory 382.

(2) Procedure of Substrate-Processing Process

Next, the procedure of the substrate-processing process performed byusing the substrate processing apparatus 10 including theabove-described configuration will be described. Thesubstrate-processing process is performed as a process of manufacturinga semiconductor device and is for performing a predetermined process tothe substrate 200 to be processed. In the following description, as thepredetermined process, an example in which a HCDS gas is used as thefirst process gas and an O₂ gas is used as the second process gas toform a film on the surface of the substrate 200 will be described. Here,it is assumed that an alternate supplying process of alternatelysupplying different process gases is performed.

When the term “wafer” is used in the present disclosure, it may refer to“a wafer itself” or “a wafer and a stacked body of certain layers orfilms formed on a surface of the wafer.” When the phrase “a surface of awafer” is used in the present disclosure, it may refer to “a surface ofa wafer itself” or “a surface of a certain layer formed on a wafer.”When the expression “a certain layer is formed on a wafer” is used inthe present disclosure, it may mean that “a certain layer is formeddirectly on a surface of a wafer itself” or that “a certain layer isformed on a layer formed on a wafer.” When the term “substrate” is usedin the present disclosure, it may be synonymous with the term “wafer.”

Hereinafter, the substrate-processing process will be described withreference to FIGS. 5 to 7 . FIG. 5 illustrates the entire procedure ofthe substrate-processing process. FIG. 6 is a diagram for explaining anoperating state of each part in each of the chambers 100 a and 100 b inthe substrate-processing process shown in FIG. 5 . FIG. 7 illustratesthe details of a film-processing step S106 in the substrate-processingprocess.

In the following description, the operations of various partsconstituting the substrate processing apparatus 10 are controlled by thecontroller 380.

In the substrate-processing process, first, a substrate-loading/mountingstep is performed. This step is not shown in FIG. 5 . In thesubstrate-loading/mounting step, the substrate-mounting table 312 in thechamber 100 is lowered to the substrate transfer position, and the liftpins 307 is passed through the through-holes 314 of thesubstrate-mounting table 312. As a result, the lift pins 307 are in astate of protruding from the surface of the substrate-mounting table 312by a predetermined height. Then, in that state, the gate valve 149 isopened to communicate the transfer space 306 with the vacuum transferchamber (not shown), and the substrate 200 is loaded from the vacuumtransfer chamber into the transfer space 306 by using a substratetransfer device (not shown) and is transferred onto the lift pins 307.As a result, the substrate 200 is supported in a horizontal posture onthe lift pins 307 protruding from the surface of the substrate-mountingtable 312.

(Substrate-Processing-Position-Moving Step: S102)

A substrate-processing-position-moving step S102 will be described.After the substrate 200 is loaded into the chamber 100, the substratetransfer device is retracted to the outside of the chamber 100, and thegate valve 149 is closed to seal the interior of the chamber 100. Afterthat, the substrate 200 is mounted on the substrate-mounting surface 311by raising the substrate-mounting table 312, and the substrate-mountingtable 312 is further raised to the substrate-processing position tolocate the substrate 200 on the substrate-mounting surface 311 in theprocess space 305.

At this time, electric power is supplied to the heater 313 embeddedinside the substrate-mounting table 312 to control the surface of thesubstrate 200 on the substrate-mounting surface 311 to have apredetermined temperature. The temperature of the substrate 200 is, forexample, the room temperature or higher and 800 degrees C. or lower,specifically the room temperature or higher and 500 degrees C. or lower.At that time, the temperature of the heater 313 is adjusted by thecontroller 380 to extract a control value based on temperatureinformation detected by a temperature sensor (not shown) and control adegree of supplying electric power to the heater 313.

In this step, as shown in FIG. 6 , without supplying the first processgas and the second process gas from the chambers 100 a and 100 b,respectively, an inert gas is supplied from the third gas supply part.Furthermore, the exhaust pump 223 is operated. At this time, theoperations of the APC 222, the pressure detectors 227 a and 227 b, andthe timer 380 e may be stopped.

While the substrate-mounting table 312 moves to the substrate-processingposition, the process chamber 301 of each chamber 100 is set to have aninert gas atmosphere so that dust and the like generated when thesubstrate-mounting table 312 moves does not enter into the processchamber 301.

It is assumed that the operations in the substrate-loading/mounting stepand the substrate-processing-position-moving step S102 are performed inthe same manner in each of the chambers 100 a and 100 b.

(First Pressure-Adjusting Step: S104)

A first pressure-adjusting step S104 will be described. When thesubstrate 200 moves to the substrate-processing position, the internalpressure of the process chamber 301 is adjusted to a predeterminedpressure. The predetermined pressure is, for example, a pressure in afirst process-gas-supplying-step S202 of the film-processing step S106.Therefore, here, the pressure is lowered. Here, as shown in FIG. 6 , forexample, the third gas supply part is operated to supply the inert gasto the process chamber 301, and the exhaust pump 223 is operated to setthe process chamber 301 to an inert gas atmosphere. At this time, theopening degree of the APC 222 is adjusted and fixed. Further, thepressure detectors 227 a and 227 b may also be operated, and thepressure of each process chamber 301 may be adjusted based on detectiondata.

(Film-Processing Step: S106)

Next, the film-processing step S106 will be described. In thefilm-processing step S106, gases are supplied from the first gas supplypart and the second gas supply part, respectively, to perform a processto the substrate 200. Then, when the process is completed, the substrate200 is unloaded from the chamber 100. This operation is performedrepeatedly for a predetermined number of substrates 200. Details of thisfilm-processing step S106 will be described later. When thefilm-processing step S106 is completed, the supply of the process gasesfrom the first gas supply part and the second gas supply part isstopped. The supply of the inert gas from the third gas supply part maybe stopped or continued. In this step, the opening degree of the APC 222is fixed for the reason to be described later.

(Details of Film-Processing Step S106)

Subsequently, the details of the film-processing step S106 will bedescribed with reference to FIG. 7 .

(First Process-Gas-Supplying Step: S202)

The first process-gas-supplying step S202 will be described. When thesubstrate 200 in the process space 305 reaches a predeterminedtemperature, first, the first process-gas-supplying step S202 isperformed. In the first process-gas-supplying step S202, the valves 116a and 116 b are opened, and the MFCs 115 a and 115 b are adjusted sothat a HCDS gas has a predetermined flow rate. The supply flow rate ofthe HCDS gas is set to, for example, 100 sccm or more and 800 sccm orless. At this time, a N₂ gas is supplied from the third gas supply part.The N₂ gas supplied from the third gas supply part is used as a carriergas for the HCDS gas.

Further, in the first process-gas-supplying step S202, the valves 221,228 a, and 228 b are opened, and the opening degree of the APC 222 isadjusted while operating the pump 223, so that the internal pressure ofthe chamber 100 becomes a desired pressure. Specifically, the pressureof each of the process space 305 and the transfer space 306 iscontrolled to be, for example, a predetermined value within the range of50 to 300 Pa. The predetermined value is, for example, 250 Pa.

In the process space 305 to which the HCDS gas is supplied, the HCDS gasis decomposed into silicon components and the like by heat and issupplied onto the substrate 200. As a result, a silicon-containing layeras a “first element-containing layer” is formed on the surface of thesubstrate 200. The silicon-containing layer corresponds to a precursorof a thin film to be formed.

Then, after a predetermined time has elapsed from the start of thisstep, the valves 116 a and 116 b are closed to stop the supply of theHCDS gas.

(First Purging Step: S204)

A first purging step S204 will be described. After the completion of thefirst process-gas-supplying step S202, the first purging step S204 isthen performed. In the first purging step S204, with the valves 136 a,136 b, 176 a, and 176 b fixed at the open state, the valves 186 a and186 b are further opened to supply a N₂ gas to the process space 305,and the exhaust by the pump 223 or the like is continued to purge theatmosphere.

Then, after a predetermined time has elapsed from the start of thisstep, the valves 136 a and 136 b are closed to stop the purging of theatmosphere by the supply of the N₂ gas.

(Second Process-Gas-Supplying Step: S206)

A second process-gas-supplying step S206 will be described. Afterclosing the valves 136 a and 136 b to complete the first purging stepS204, the second process-gas-supplying step S206 is then performed. Inthe second process-gas-supplying step S206, the valves 126 a and 126 bare opened, the flow rate of an O₂ gas is adjusted by the MFCs 125 a and125 b, and the supply of the O₂ gas into the process space 305 isstarted. The supply flow rate of the O₂ gas is set to, for example, 100sccm or more and 6,000 sccm or less. At this time, the valves 136 a and136 b are opened to supply a N₂ gas from the third gas supply part. TheN₂ gas supplied from the third gas supply part is used as a carrier gasor a dilution gas for the O₂ gas.

Further, in the second process-gas-supplying step S206, as in the caseof the first process-gas-supplying step S202, the exhaust by the pump223 or the like is continued so that the internal pressure of thechamber 100 becomes a desired pressure.

The O₂ gas supplied to the process space 305 is decomposed by heat. Inthe process space 305, the decomposed O₂ gas is supplied onto thesubstrate 200. As a result, the silicon-containing layer is modified bythe O₂ gas so that a thin film composed of a layer containing a siliconelement and an oxygen element is formed on the surface of the substrate200.

Then, after a predetermined time has elapsed from the start of thisstep, the valves 126 a and 126 b are closed to stop the supply of the O₂gas.

(Second Purging Step: S208)

A second purging step S208 will be described. After the completion ofthe second process-gas-supplying step S206, the second purging step S208is then performed. In the second purging step S208, as in the firstpurging step S204, a N₂ gas is supplied from the first inert gas supplypipes 131 a and 131 b to purge the atmosphere of the process space 305.

Then, after a predetermined time has elapsed from the start of thisstep, the valves 136 a and 136 b are closed to stop the purging of theatmosphere by the supply of the N₂ gas.

(Determining Step: S210)

A determining step S210 will be described. When the second purging stepS208 is completed, the controller 380 determines whether or not onecycle including the first process-gas-supplying step S202, the firstpurging step S204, the second process-gas-supplying step S206, and thesecond purging step S208, which are sequentially performed, has beenperformed a predetermined number of times (n cycles).

When the cycle has not been performed a predetermined number of times(“No” in S210), the cycle including the first process-gas-supplying stepS202, the first purging step S204, the second process-gas-supplying stepS206, and the second purging step S208 are repeated. When the cycle hasbeen performed a predetermined number of times (“Yes” in S210), theseries of steps shown in FIG. 7 is completed.

By the way, the opening degree of the APC 222 is fixed during the firstprocess-gas-supplying step S202 to the second purging step S208, asshown in FIG. 6 . Here, the reason for this will be explained.

In the present embodiments, the first process-gas-supplying step S202 tothe second purging step S208 are continuously performed, but inconsideration of a throughput, each step is performed in a very shortperiod of time. For example, it takes less than 60 seconds, specificallyabout 50 seconds, from the first process-gas-supplying step S202 to thesecond purging step S208.

This is the time that can be realized because the volume of the processchamber 301 is small. For example, as a comparative example, there is avertical apparatus having a large volume for the process chamber. Whenthe first process-gas-supplying step S202 to the second purging stepS208 are performed in the vertical apparatus, the time for filling theprocess chamber with a gas or the time for discharging a gas from theprocess chamber is longer than in the present embodiments due to thelarge volume. For example, it takes about 120 seconds.

Since the process chamber 301 of the present embodiments has a smallervolume than the vertical apparatus which is the comparative example, theamount of gas supplied into the process chamber 301 can be smaller thanthat of the vertical apparatus. Therefore, in the firstprocess-gas-supplying step S202 and the second process-gas-supplyingstep S206, the gas can be filled more quickly than in the verticalapparatus, and further, in the first purging step S204 and the secondpurging step S208, the atmosphere of the process chamber 301 can be morequickly exhausted than in the vertical apparatus.

By the way, since the gas is replaced in each step as described above,the pressure of the process chamber 301 may be adjusted in each step. Itis conceivable that the pressure is adjusted by using an APC, forexample, as in the first pressure-adjusting step S104. However, it istechnically difficult to adjust the opening degree of the APC in a shorttime. Therefore, if the pressure is adjusted for each step by using theAPC, the throughput will be significantly reduced.

Under such circumstances, in the substrate processing apparatus 10 ofthe present embodiments, the opening degree of the APC 222 is fixedduring the first process-gas-supplying step S202 to the second purgingstep S208. Further, even when a plurality of substrates are continuouslyprocessed, it is preferable to fix the opening degree of the APC 222from the viewpoint of improving the throughput. That is, the openingdegree of the APC 222 is fixed during A in FIG. 5 .

Further, in the apparatus of the present embodiments, since the openingdegree of the APC 222 is fixed as described above, the diameters of theexhaust pipes 224 and 226 are set to be very thin, for example, 20 to 30mm. With such a configuration, since the pressures of the exhaust pipes224 and 226 can be accurately detected, even when the opening degree ofthe APC 222 is fixed, the pressure can accurately adjusted by thecooperation of the gas supply part and the exhaust pump.

(Second Pressure-Adjusting Step: S108)

Next, a second pressure-adjusting step S108 will be described. After thefilm-processing step S106 is completed, the internal pressure of theprocess chamber 301 is adjusted. For example, the internal pressure ofthe process chamber 301 is raised from a vacuum level pressure.

Specifically, while the supply of process gases from the first gassupply part and the second gas supply part is stopped, an inert gas issupplied from the third gas supply part to each process chamber 301, andthe exhaust flow rate of the inert gas is adjusted by the exhaust pump223 to raise the internal pressure of the process chamber 301. The inertgas supplied from the third gas supply part is supplied to each processchamber 301 at the same flow rate.

(Pressure-Rising-Speed-Calculating Step: S110)

Next, a pressure-rising-speed-calculating step S110 will be described.The pressure-rising-speed-calculating step S110 is a step performed inparallel with the second pressure-adjusting step S108. In thepressure-rising-speed-calculating step S110, the pressure at the exhaustpipes 224 and 226 is detected. Here, after the lapse of time T1 afterthe pressure detection is started, the pressure detection is stopped anda pressure-rising speed value is calculated. For example, thepressure-rising speed value is calculated from a pressure value when thepressure detection is started and a pressure value detected after thetime T1. The time T1 is counted by the timer 380 e. In this step, theopening degree of the APC 222 is fixed for the reason to be describedabove.

The pressure detectors 227 a and 227 b start detecting the pressureafter the inert gas passes through connection portions with the exhaustpipes 224 and 226. The measurement time is counted by the timer 380 e,and the detection is stopped after the lapse of time T1.

The time T1 is a time during which the pressure-rising speed value canbe detected, and is a time set before the pressure reaches a targetpressure. Next, the reason for this will be explained.

As a method of detecting the pressure, it is conceivable to momentarilydetect the pressure only once in a shorter time than T1 or detect thepressure after time T1. However, when the pressure is detectedmomentarily only once, the pressure cannot be detected accurately if anexhaust flow is unstable.

Further, as a case of detecting the pressure after time T1, it isconsidered, for example, that the pressures of the process chamber 100 aand the process chamber 100 b reach a target pressure. In this case,since the pressures have reached the target pressure in both the processchambers, the pressure in the exhaust pipe 224 becomes equal to thepressure in the exhaust pipe 226. Therefore, since the pressure-risingspeed in the exhaust pipe 224 becomes equal to that in the exhaust pipe226, it is unknown which of the pipes is clogged.

On the other hand, as in the present embodiments, when the pressuredetection is completed before the pressure reaches the target pressure,it can be known which of the exhaust pipe 224 and the exhaust pipe 226is clogged. For example, a pipe without being clogged has a largerpressure-rising speed value than that of a pipe being clogged.

Further, it is preferable that the pressure detectors 227 a and 227 bhave the same detection start time and detection end time and detect thepressures in parallel. By doing so, the pressure-rising speed value canbe detected in each of the exhaust pipes 224 and 226 under the sameexhaust conditions. Therefore, an accurate comparison can be made in aprocess-setting step S112 to be described later.

Further, since this step is performed between the film-processing stepS106 and a substrate-replacing step S118 to be described later, it isperformed between the time when the supply of process gas to the processchamber is stopped and the time when the substrate is unloaded from theprocess chamber.

Further, since this step is performed between the film processing stepS106 and a substrate-transfer-position-moving step S114 to be describedlater, it is performed between the time when the supply of process gasto the process chamber is stopped and the time when the substrate movesto the substrate transfer position.

Further, since this step is performed before the substrate-replacingstep S118, it is performed before the substrate 200 is unloaded from theprocess chamber 301.

Further, since this step is performed before the substrate-replacingstep S118, the pressure detector 227 stops the pressure detection beforethe process gas is supplied from the process gas supply part into theprocess chamber 301. At this time, the pressure detection of thepressure detectors 227 a and 227 b installed in the exhaust pipes 224and 226 of the respective process chambers is stopped.

(Process-Setting Step: S112)

Subsequently, the process-setting step S112 will be described. When thesecond pressure-adjusting step S108 and thepressure-rising-speed-calculating step S110 are completed, the processproceeds to the process-setting step S112.

The pressure-rising speed value calculated in thepressure-rising-speed-calculating step S110 is recorded in thepressure-recording part 392. The pressure-rising speed value recorded inthe pressure-recording part 392 is compared with the comparison datastored in the comparison data memory 393. In addition, the data detectedby the pressure detectors are compared with each other. Based on this,the subsequent operation of the substrate processing apparatus 10 isset.

As the type of comparison, the pressure-rising speed value calculatedfor each pressure detector is compared with the comparison data, anddifferences between the pressure-rising speed values calculated by thepressure detectors are compared with each other.

Further, as illustrated in FIG. 4 , in the comparison between thepressure-rising speed value calculated for each pressure detector andthe comparison data, for example, an operation is set for each of threelevels, level a, level b, and level c. For example, level a has adivergence of 0 to 5%, level b has a divergence of 6 to 10%, and level chas a divergence of 11% or more.

Here, when the pressure-rising speed value is level a, it is determinedthat there is no problem, and the setting is maintained to process thenext substrate. When the pressure-rising speed value is level b, it isdetermined that clogging of the exhaust pipe may affect the substrateprocessing if the process is continued as it is, and the notificationpart 384 notifies to that effect. At this time, for example, a substrateto be processed next or a substrate in a lot to be processed next maynot be loaded into the substrate processing apparatus 10. Further, here,a message prompting maintenance (for example, cleaning or replacement)of the exhaust pipe may be notified. Further, when the pressure-risingspeed value is level c, it is determined that the substrate processingcannot be continued any more, and the process is stopped. By setting thesubsequent process in this way, it is possible to prevent defectivesubstrates from being output.

Further, the pressure-rising speed value of the exhaust pipe 224calculated based on the data detected by the pressure detector 227 a maybe compared with the pressure-rising speed value of the exhaust pipe 226calculated based on the data detected by the pressure detector 227 b. Inthis case, the differences between the pressure-rising speed values arecalculated. The differences are, for example, four levels, level α,level β, level γ, and level δ, and an operation is set for each level.

For example, level α has a divergence of 0 to 3%, level β has adivergence of 4 to 6%, level γ has a divergence of 7 to 10%, and level δhas a divergence of 11% or more. When the difference is level α, it isdetermined that there is no problem, and the process is continued toprocess the next substrate.

When the difference is level β and both the pressure detectors are atlevel α, it can be determined that the entire exhaust pipe does not meeta desired exhaust capacity, although there is no clogging. In that case,the APC 222 is readjusted before the next substrate 200 is loaded. Thereadjustment is performed, for example, in a third pressure-adjustingstep S122.

When the difference is level γ, it is determined that clogging of theexhaust pipe may affect the substrate processing if the process iscontinued as it is, and the notification part 384 notifies to thateffect. At this time, for example, a substrate to be processed next or asubstrate in a lot to be processed next may not be loaded into thesubstrate processing apparatus 10. Further, here, a message promptingmaintenance (for example, cleaning or replacement) of the exhaust pipemay be notified. Further, when the difference is level δ, it isdetermined that the substrate processing cannot be continued any more,and the process is stopped. By setting the subsequent process in thisway, it is possible to prevent defective substrates from being output.

In the present embodiments, since it is possible to make determinationbefore the next substrate 200 is loaded, the occurrence of defectivesubstrates can be reduced.

(Substrate-Transfer-Position-Moving Step S114)

The substrate-transfer-position-moving step S114 will be described. Inthe substrate-transfer-position-moving step S114, the substrate-mountingtable 312 in the chamber 100 is lowered to the substrate transferposition, and the substrate 200 is supported on the lift pins 307protruding from the surface of the substrate-mounting table 312. As aresult, the substrate 200 is transferred from the substrate-processingposition to the substrate transfer position.

(Determining Step: S116)

Subsequently, a determining step S116 will be described. In thedetermining step S116, it is determined whether or not a predeterminednumber of substrates 200 have been processed. When it is determined thatthe predetermined number of substrates 200 have been processed, theprocess is completed via a substrate-unloading step (not shown). When itis determined that the predetermined number of substrates 200 have notbeen processed, the process proceeds to the substrate-replacing stepS118.

(Substrate-Replacing Step: S118)

Subsequently, the substrate-replacing step S118 will be described. Whenit is determined in the determining step S116 that the predeterminednumber of substrates 200 have not been processed, the processedsubstrate 200 is replaced with an unprocessed substrate 200 to beprocessed. The unprocessed substrate 200 is made to stand by on the liftpins 207 as described above.

(Substrate-Processing-Position-Moving Step: S120)

Subsequently, a substrate-processing-position-moving step S120 will bedescribed. The substrate 200 on standby on the lift pins 207 is moved tothe substrate-processing position in the same manner as in thesubstrate-processing-position-moving step S102.

(Third Pressure-Adjusting Step: S122)

Subsequently, the third pressure-adjusting step S122 will be described.Here, with the opening degree of the APC 222 fixed, the internalpressure of the process chamber 301 is adjusted in the same manner as inthe first pressure-adjusting step S104. After adjusting the pressure,the process proceeds to the film-processing step S106 where the filmprocessing of the unprocessed substrate 200 is performed.

A dotted line region A shown in FIG. 5 indicates a region surroundingthe steps in a state where the opening degree of the APC 222 is fixed.In this way, the opening degree of the APC 222 is fixed from thefilm-processing step S106 to the third pressure-adjusting step S122.

(Substrate-Unloading Step)

A substrate-unloading step will be described. This step is not shown inFIG. 5 . When the substrate 200 is moved to the substrate transferposition, the gate valve 149 is opened and the substrate 200 is unloadedout of the chamber 100 by using the substrate transfer device (notshown).

Second Embodiments

Next, the second embodiments of the present disclosure will be describedwith reference to FIG. 8 . FIG. 8 is a flow chart of asubstrate-processing process according to the second embodiments. Adifference from the first embodiments is that apressure-rising-speed-calculating step S302 is performed in parallelwith the third pressure-adjusting step S122, and the process-settingstep is performed before the film-processing step S106. Other points arethe same as in the case of the first embodiments. Hereinafter, thedifference will be mainly described.

In the second embodiments, the pressure-rising-speed-calculating stepS302 is performed in parallel with the third pressure-adjusting stepS122. Here, the pressure-rising speed values of the exhaust pipes 224and 226 are calculated in the same manner as in thepressure-rising-speed-calculating step S110 of the first embodiments.

Specifically, this is as follows.

(Pressure-Rising-Speed-Calculating Step: S302)

The pressure-rising-speed-calculating step S302 will be described. Inthe pressure-rising-speed-calculating step S302, the pressure of each ofthe exhaust pipes 224 and 226 is detected for a predetermined time, anda pressure-rising speed value of the pressure is calculated. For thesame reason as in the first embodiments, the opening degree of the APC222 is fixed.

First, an inert gas is supplied from the third gas supply part into theprocess chamber 301 in a state where the supply of the process gas fromthe first gas supply part and the second gas supply part is stopped. Atthis time, the exhaust pump 223 is in operation following the firstpressure-adjusting step S104. The supplied inert gas passes through eachprocess chamber 301, the exhaust pipes 224 and 226, and the common gasexhaust pipe 225 to make the interior of each process chamber to aninert gas atmosphere.

The pressure detectors 227 a and 227 b start measurement when the inertgas begins to pass through the connection parts with the exhaust pipes224 and 226. The measurement time is counted by the timer 380 e, and themeasurement is stopped after the lapse of a predetermined time. Thedetected pressure is recorded in the pressure-recording part 392. Bydetecting before proceeding to the film-processing step S106, thepressure can be detected in a more stable state.

The calculation part 391 calculates a pressure-rising speed value from apressure value measured at the start of counting of the timer 380 e, apressure value measured after the lapse of time T2 from the start ofcounting, and the time T2. For example, the pressure-rising speed valueis calculated based on the degree of pressure rise in a predeterminedtime.

Here, the reason for detecting the pressure during the limited time T2,instead of simply detecting the pressure, will be explained. As a methodof detecting the pressure, it is conceivable to momentarily detect thepressure only once in a shorter time than T2 or detect the pressureafter time T2. However, when the pressure is detected momentarily onlyonce, the pressure cannot be detected accurately if an exhaust flow isunstable.

Further, as a case of detecting after time T2, it is considered, forexample, that the atmosphere is completely exhausted in either theprocess chamber 100 a or the process chamber 100 b. In this case, sincethe exhausting atmosphere changes between the exhaust pipe 224 and theexhaust pipe 226, it is not possible to compare the pressures measuredin the pipes.

On the other hand, as in the present embodiments, when the pressuredetection is completed before the atmosphere is completely exhausted inany of the process chambers, since the exhaust pipe 224 and the exhaustpipe 226 have the same atmosphere, the comparison conditions can be thesame. Therefore, an accurate comparison can be made in a process-settingstep S304 to be described later.

Further, since this step is performed between the substrate-replacingstep S118 and the film-processing step S106, it can be said that thisstep is performed between the time when the substrate 200 is loaded intothe process chamber 301 and the time when a process gas is started to besupplied into the process chamber 301.

Further, since this step is performed before the film-processing stepS106, the pressure detector 227 stops the pressure detection before theprocess gas is supplied from the process gas supply part into theprocess chamber 301. At this time, the pressure detection of thepressure detectors 227 a and 227 b installed in the exhaust pipes 224and 226 of the respective process chambers is stopped.

(Process-Setting Step: S304)

Subsequently, the process-setting step S304 will be described. Thecalculated pressure-rising speed value is recorded in thepressure-recording part 392. The pressure-rising speed value recorded inthe pressure-recording part 392 is compared with the comparison datastored in the comparison data memory 393. In addition, the data detectedby the pressure detectors are compared with each other. The operation ofthe substrate processing apparatus 10 is selected based on thecomparison result. Here, the determination is made in the same manner asin the first embodiments.

In the present embodiments, since the determination can be made in thestate where the substrate 200 is loaded into the process chamber, thepressure of the exhaust pipe can be detected more accurately. Therefore,the state of clogging can be accurately grasped, and as a result, thenumber of defective substrates can be reduced.

Here, a vertical apparatus will be described as a comparative example.Since the vertical apparatus has a longer time of one cycle than theapparatus of the present embodiments and further processes a pluralityof substrates at once, even if the processing time is long by using anAPC, the productivity is not significantly reduced. Therefore, the APCis not fixed in the vertical apparatus.

Further, in the case of the vertical apparatus, since the volume of theprocess chamber is large, the diameter of the exhaust pipe is set to,for example, about 100 mm in order to quickly purge the atmosphere ofthe process chamber. Therefore, unlike the present embodiments, it isdifficult to accurately detect the pressure of the exhaust pipe, whichforces the pressure to be adjusted by using an APC.

Under such circumstances, it is difficult to realize the presentembodiments with the configuration of the vertical apparatus.

OTHER EMBODIMENTS

Although the first embodiments and the second embodiments of the presentdisclosure have been described above, the present disclosure is notlimited to the above-described embodiments, but various changes can bemade without departing from the gist thereof.

In the above-described embodiments, the method of alternately supplyingthe precursor gas and the reaction gas to form a film has beendescribed. However, the present disclosure can be applied to othermethods only if the vapor phase reaction amount of the precursor gas andthe reaction gas and the amount of by-products generated are within apermissible range. One example of such methods is to overlap the supplytimings of the precursor gas and the reaction gas.

Further, in the above-described embodiments, the example of forming thesilicon oxide film by using the silicon-containing gas as the precursorgas and the oxygen-containing gas as the reaction gas has been shown,but the present disclosure can also be applied to film formation whereother gases are used. For example, there are an oxygen-containing film,a nitrogen-containing film, a carbon-containing film, a boron-containingfilm, a metal-containing film, a film containing two or more of theseelements, and the like. Examples of these films may include a SiN film,an AlO film, a ZrO film, a HfO film, a HfAlO film, a ZrAlO film, a SiCfilm, a SiCN film, a SiBN film, a TiN film, a TiC film, a TiAlC film,and the like. By comparing the gas characteristics (adsorption,desorption, vapor pressure, etc.) of a precursor gas and a reaction gasused to form these films and appropriately changing the supply positionand the structure of the process chamber, the same effects can beobtained.

Further, in the above-described embodiments, the N₂ gas has beendescribed as an example of the inert gas, but the inert gas is notlimited thereto but may be any gas as long as it cannot react with theprocess gas. For example, a rare gas such as a helium (He) gas, a neon(Ne) gas, or an argon (Ar) gas can be used as the inert gas.

Further, in the above-described embodiments, it has been described thatthe operation of each of the parts is stopped, but this does notnecessarily mean that the operation of the entire parts is stopped. Forexample, the description that the operation of the gas supply is stoppedmeans that a gas is not supplied to the process chamber 301.

Further, in the above-described embodiments, the expression “the same”or “practically the same” is used for the pressure difference, but itgoes without saying that the pressure difference is not limited toexactly the same. For example, it naturally includes a state that issubstantially equal to the extent that the quality of substrateprocessing can be maintained.

Further, in the above-described embodiments, the example in which twopressure detectors are used has been described, but without beinglimited thereto, one pressure detector may be used. In this case, it maybe installed in the common gas exhaust pipe 225. By doing so, it ispossible to determine the clogging state of the exhaust pipe even with asmall number of parts. For example, it is determined whether or not thepressure reaches the target pressure within a predetermined time, andwhen the pressure does not reach the target pressure, it is determinedthat either one of the process chamber exhaust pipes or the common gasexhaust pipe 225 causes clogging.

According to the present disclosure in some embodiments, it is possibleto predict a reduction in exhaust performance and maintain highproductivity.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the embodiments described herein maybe embodied in a variety of other forms. Furthermore, various omissions,substitutions and changes in the form of the embodiments describedherein may be made without departing from the spirit of the disclosures.The accompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of thedisclosures.

What is claimed is:
 1. A method of processing a substrate, comprising:(a) adjusting pressure of each of process chambers, by adjusting apressure-adjuster provided to a gas exhauster comprising process chamberexhaust pipes individually connected to the process chambers,respectively, and a common gas exhaust pipe disposed to merge respectiveprocess chamber exhaust pipes on a downstream side of the processchamber exhaust pipes, and by exhausting an atmosphere of each of theprocess chambers from the gas exhauster while supplying inert gas to theprocess chambers; and (b) detecting a fluctuation in pressure of theprocess chamber exhaust pipes by measuring the pressure of the processchamber exhaust pipes for a predetermined time in parallel withsupplying the inert gas to the process chambers.
 2. The method of claim1, wherein in (b), detecting the pressure of the process chamber exhaustpipes is started when the inert gas passes through the process chamberexhaust pipes.
 3. The method of claim 1, wherein in (b), the pressure ofthe process chamber exhaust pipes is detected for the predetermined timebetween the time when a substrate is loaded into each of the processchambers and the time when supply of process gas to the process chambersis started.
 4. The method of claim 1, wherein in (b), the pressure ofthe process chamber exhaust pipes is detected for the predetermined timebetween the time when supply of process gas to the process chambers isstopped and the time when a substrate is unloaded from each of theprocess chambers or between the time when supply of process gas into theprocess chambers is stopped and the time when a substrate moves to asubstrate transfer position.
 5. The method of claim 1, wherein thepressure-adjuster is a pressure-adjusting valve, and wherein in (b), thepressure of the process chamber exhaust pipes is detected in a statewhere an opening degree of the pressure-adjusting valve is fixed.
 6. Themethod of claim 1, wherein the pressure-adjuster is a pressure-adjustingvalve, and wherein the pressure-adjusting valve is installed in thecommon gas exhaust pipe.
 7. The method of claim 1, wherein in (b), thepressure of the process chamber exhaust pipes is detected, respectively,in parallel.
 8. The method of claim 1, wherein the pressure-adjuster isa pressure-adjusting valve, and wherein in (b), one or more pressuredetectors are operated in a state where an opening degree of thepressure-adjusting valve is fixed.
 9. The method of claim 1, wherein in(b), detecting the pressure of the process chamber exhaust pipes isstopped before process gas is supplied to the process chambers from aprocess gas supplier or before a substrate is unloaded from each of theprocess chambers.
 10. The method of claim 1, wherein in (b), detectingthe pressure of the process chamber exhaust pipes is stopped beforeprocess gas is supplied to the process chambers from a process gassupplier or before a substrate is unloaded from each of the processchambers.
 11. The method of claim 1, further comprising: storing, by amemory, comparison data to be compared with a pressure-rising speedvalue; and comparing, by a controller, a fluctuation value with thecomparison data.
 12. The method of claim 11, wherein the comparison datais data when processing of a substrate is operated normally, or datahaving highest quality.
 13. The method of claim 1, wherein thepressure-adjuster is a pressure-adjusting valve, wherein in (b), thefluctuation in the pressure of the process chamber exhaust pipes isdetected in a state where an opening degree of the pressure-adjustingvalve is fixed, and wherein the opening degree of the pressure-adjustingvalve is adjusted if there is a divergence in difference betweenpressure-rising speed values respectively detected by one or morepressure detectors and if there is no divergence in difference betweenthe pressure-rising speed values respectively detected by the one ormore pressure detectors and comparison data.
 14. The method of claim 1,wherein the pressure-adjuster is a pressure-adjusting valve, wherein in(b), the fluctuation in the pressure of the process chamber exhaustpipes is detected in a state where an opening degree of thepressure-adjusting valve is fixed, and wherein maintenance is notifiedif there is a divergence in difference between pressure-rising speedvalues respectively detected by one or more pressure detectors or ifthere is a divergence in difference between any of the pressure-risingspeed values and a reference value.
 15. The method of claim 1, whereinthe pressure-adjuster is a pressure-adjusting valve, wherein in (b), thefluctuation in the pressure of the process chamber exhaust pipes isdetected in a state where an opening degree of the pressure-adjustingvalve is fixed, and wherein processing of a substrate is stopped ifthere is a divergence in difference between pressure-rising speed valuesrespectively detected by one or more pressure detectors and if there isa divergence in difference between the pressure-rising speed valuesrespectively detected by the one or more pressure detectors andcomparison data.
 16. The method of claim 1, wherein a diameter of eachof the process chamber exhaust pipes is 20 to 30 mm.
 17. The method ofclaim 1, wherein the fluctuation in the pressure of the process chamberexhaust pipes is detected by one or more pressure detectors installed inthe gas exhauster.
 18. A method of manufacturing semiconductor device,comprising the method of claim
 1. 19. A substrate processing apparatus,comprising: process chambers configured to process substrates; a processgas supplier configured to supply process gas to the process chambers;an inert gas supplier configured to supply inert gas to the processchambers; a gas exhauster comprising process chamber exhaust pipesindividually connected to the process chambers, respectively, and acommon gas exhaust pipe disposed to merge respective process chamberexhaust pipes on a downstream side of the process chamber exhaust pipes;a pressure-adjuster provided to the gas exhauster; and a controllerconfigured to be capable of controlling one or more pressure detectorsto detect a fluctuation in pressure of the process chamber exhaust pipesby measuring the pressure of the process chamber exhaust pipes for apredetermined time in parallel with supplying the inert gas to theprocess chambers.
 20. A non-transitory computer-readable recordingmedium storing a program that causes, by a computer, a substrateprocessing apparatus to perform a process comprising: (a) adjusting apressure of each of process chambers, by adjusting a pressure-adjusterprovided to a gas exhauster comprising process chamber exhaust pipesindividually connected to the process chambers, respectively, and acommon gas exhaust pipe disposed to merge respective process chamberexhaust pipes on a downstream side of the process chamber exhaust pipes,and by exhausting an atmosphere of each of the process chambers from thegas exhauster while supplying inert gas to the process chambers; and (b)detecting a fluctuation in pressure of the process chamber exhaust pipesby measuring the pressure of the process chamber exhaust pipes for apredetermined time in parallel with supplying the inert gas to theprocess chambers.